By L. C. Kimerling, L. Dal Negro, M. Stolfi (auth.), Nobuyoshi Koshida (eds.)
Recent advancements within the expertise of silicon nanocrystals and silicon nanostructures, the place quantum-size results are very important, are systematically defined together with examples of equipment purposes. a result of robust quantum confinement impression, the fabric homes are free of the standard oblique- or direct-bandgap regime, and the optical, electric, thermal, and chemical houses of those nanocrystalline and nanostructured semiconductors are significantly replaced from these of bulk silicon. as well as effective seen luminescence, a variety of different worthwhile fabric features are prompted in nanocrystalline silicon and periodic silicon nanostructures. a few novel units and functions, in fields resembling photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron machine, spin transistor, nonvolatile reminiscence, and ballistic electron emitter), acoustics, and biology, were built by means of those quantum-induced features in methods varied from the traditional scaling precept for ULSI.
- Offers the 1st finished therapy of contemporary advances in quantum-sized silicon gadget know-how
- Presents systematic and brilliant descriptions from a technological perspective, offering a practical standpoint on imminent silicon machine strategies within the post-scaling period
- Shows how silicon nanocrystal expertise is key to the way forward for silicon electronics, optoelectronics, and photonics
- Reviews optimum recommendations for constructing the following iteration of units for microelectronics, photonics, acoustics, and biology
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Extra resources for Device applications of silicon nanocrystals and nanostructures
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12. Integration Besides EL devices, useful optical devices such as optical waveguides , optical wcated on silicon substrates by simple processing. Besides, optical nonlinearity in PS has been demonstrated in a Fabry-Pérot resonator, leading to the availability of PS for optical switches and optical logic gates . Most of these phenomena have only been observed separately (on different substrates). However, progresses have been made in the integration of some of these functions, especially the EL.
68] have deposited polyaniline (PANI) into n+ PS by chemical oxidation of aniline by persulfate ions. Optimal results are obtained with deposition of two layers of PANI. More layers of PANI reduce the EL intensity. The test device, without polymer shows a voltage threshold of EL of about 9 V. When two PANI layers are deposited in PS, the voltage threshold of EL becomes 3 V and EL intensity increases with a much higher slope than when no polymer is present in PS. However, when more PANI layers are incorporated, the performance of the diode drops, even though it is still better than when no polymer exists in PS.
Device applications of silicon nanocrystals and nanostructures by L. C. Kimerling, L. Dal Negro, M. Stolfi (auth.), Nobuyoshi Koshida (eds.)